Contribution à l'étude des états d'impuretés dans CdTe par spectroscopie de photoluminescence

Abstract : The low-temperature (4,2 K up to 30 K) photoluminescence (PL)-spectrum of bulk p-CdTe [non intentionally-doped ; doped with arsenic (67 ppm) ; doped with arsenic (67 ppm) ; doped with antimony (137 ppm)] has been measured in the spectrum (1,3 eV to the energy gap Eg = 1.606 eV). The (PL) spectrum of the doped samples are dominated by a new band near 1.55 eV, followed by several longitudinal optical (LO)-phonon replicas. We attribute this band to donor-acceptor (D°-A°) transitions involving Cu-acceptor and an unidentified shallow donor. The low temperature (PL) shows that the new band exhibits a fine structure and is composed of two peaks (1.542 eV and 1.548 eV). The first peak is due to the dnor-acceptor (D°-A°) recombinaison and the second peak is due to conduction electron-acceptor transitions. These transitions involve the As (Sb) acceptor. The Huang-Rhys coupling factor associated to the different phonon side-bands have been obtained from the relative intensities of the luminescence lines.We have developed a theorical model which takes into account the change carrier (LO)-phonon interaction and allows for central cell corrections of the deep acceptor states. The theorical model is in reasonable agreement with experiment. It has been show that the radiative transitions associated to the light hole mass are predominant
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Mohammed Soltani. Contribution à l'étude des états d'impuretés dans CdTe par spectroscopie de photoluminescence. Autre [cond-mat.other]. Université Paul Verlaine - Metz, 1994. Français. ⟨NNT : 1994METZ012S⟩. ⟨tel-01776052⟩

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