Caractérisation et simulation de l'IGBT dans le but d'optimiser ses performances au moyen d'irradiation par électrons

Abstract : The IGBT is a hybrid power device which combines the advantages of MOS and bipolar technologies. This property ensures that the IGBT is adapted for a large variety of applications including its use in radiation environments of various severities such as space, nuclear, military, etc.... The designers must anticipate and account for the effects of these environments on the components. This consideration presents the main part of this thesis. Classical methods of characterization are adapted and new techniques are developed to study the IGBT behaviour. The evolution of its parameters with irradiation doses and types is also studied. A novel method for simulating the effects of electron irradiation (4MeV energy) in the IGBT, using the 2D devices simulator PISCES, was developed. 3D modeling is perfomed taking into account the cylindrical symmetry of the unit cell. The validity of the method is confirmed by comparison of simulation results with experimental ones performed on a series of IGBTs irradiated to various doses. The same approach can be applied for other devices and other irradiation types. Our analyzis shows that one can simulate results for any given dose. This procedure helps to save cost on irradiation tests. It can be applied for evaluation and prediction of irradiation effects
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Omar Elmazria. Caractérisation et simulation de l'IGBT dans le but d'optimiser ses performances au moyen d'irradiation par électrons. Autre. Université Paul Verlaine - Metz, 1996. Français. ⟨NNT : 1996METZ033S⟩. ⟨tel-01777142⟩

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