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Contribution à l'amélioration de méthodes de caractérisations électriques de structures MIS (Au/BN/InP) et MOS

Abstract : The control of the electrical properties of MIS systems is an important step for the development of MISFET devices. The aim of the present work is to improve the electrical characterisation techniques for MIS structures. In the first section of this thesis, the electrical performance of MIS capacitors made on n-type InP substrates, with boron nitride as an insulator (Au/BN/InP), has been studied. RF and microwave plasma-enhanced CVD (PECVD) techniques are used for the deposition of the dielectric. It is shown that some observed anomalies (essentially : the impurity redistribution in the substrate and mobile charges in the insulator) often affect interface states distributions evaluated by conventional capacitance methods. To avoid these limitations, we have developed a new method, based on modified BTS (bias temperature stress) measurements, to determine the density of interface traps D(it). The interface states distributions obtained by this technique have been compared to those obtained from capacitance-voltage (terman analysis) and DLTS measurements. We have then examined the influence to interface states in doping profile determination. An adaptation of the capacitance method, allowing the elimination of the profile distortion due to this influence, has been proposed. Furthermore it has been shown our method we can determine the signs and concentrations of mobile and fixed charges in the insulator. The observed frequency dispersion phenomena have been discussed. In the second section, we propose a new method to determine the surface doping concentration N(s), and flat-band voltage Vfb, for implanted MOS (SiO2/Si) structures. A technique to extract the insulator capacitance Ci, from C-V characteristics near flat band conditions, is also proposed. This research is motived by the trend to scale MOSFET's to deep submicron channel length, which increases the accuracy needed in modelling and measurement of these devices. Our methods are illustrated and validated by application on simulated MOS structures, using the 2D devices simulator ATLAS II (PISCES version of SILVACO)
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  • HAL Id : tel-01777229, version 1



Adil Koukab. Contribution à l'amélioration de méthodes de caractérisations électriques de structures MIS (Au/BN/InP) et MOS. Autre. Université Paul Verlaine - Metz, 1997. Français. ⟨NNT : 1997METZ046S⟩. ⟨tel-01777229⟩



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