Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer - Université de Lorraine Accéder directement au contenu
Article Dans Une Revue Physical Review Letters Année : 2014

Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Résumé

We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
Fichier principal
Vignette du fichier
Gorchon et al. - 2014 - Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer.pdf (659.4 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-01381247 , version 1 (14-10-2016)

Identifiants

Citer

J. Gorchon, J. Curiale, A. Lemaître, N. Moisan, M. Cubukcu, et al.. Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer. Physical Review Letters, 2014, 112 (2), pp.026601 ⟨10.1103/PhysRevLett.112.026601⟩. ⟨hal-01381247⟩
98 Consultations
177 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More