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Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Abstract : We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
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https://hal.univ-lorraine.fr/hal-01381247
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Submitted on : Friday, October 14, 2016 - 11:19:10 AM
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J. Gorchon, J. Curiale, A. Lemaître, N. Moisan, M. Cubukcu, et al.. Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer. Physical Review Letters, American Physical Society, 2014, 112 (2), pp.026601 ⟨10.1103/PhysRevLett.112.026601⟩. ⟨hal-01381247⟩

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