Packageless temperature sensor based on AlN/IDT/ZnO/Silicon layered structure - Université de Lorraine Access content directly
Conference Papers Year : 2013

Packageless temperature sensor based on AlN/IDT/ZnO/Silicon layered structure

Ouarda Legrani
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  • PersonId : 1048447
Omar Elmazria
Meriem Elhosni
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  • PersonId : 776483
  • IdRef : 194977234
Ausrine Bartasyte

Abstract

The possibility to generate simultaneously Surface Acoustic Wave (SAW) and Waveguiding layer acoustic wave (WLAW) in layered structures AlN/ZnO/Silicon was investigated. A delay line operating at 525 MHz was tested versus temperature in air and in contact with liquid. Experimental characterizations were also supported by modeling using the commercial software (COMSOL Multiphysics). The full delay line was simulated and liquid modeled by an additional layer on the top of AlN film.
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Dates and versions

hal-01519286 , version 1 (06-09-2018)

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Ouarda Legrani, Omar Elmazria, Meriem Elhosni, Ausrine Bartasyte, Philippe Pigeat, et al.. Packageless temperature sensor based on AlN/IDT/ZnO/Silicon layered structure. 2013 IEEE International Frequency Control Symposium, IEEE, Jul 2013, Prague, Czech Republic. ⟨10.1109/EFTF-IFC.2013.6702265⟩. ⟨hal-01519286⟩
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