Influence of defect and polarization on efficiency of InGaN-based double-junction solar cell

Abstract : A detailed investigation on the performance of an InGaN-based double-junction solar cell was carried out. We have globally simulated the solar cell using empirical InGaN material parameters, to avoid any overestimation in the solar cell performances. In order to take into account the interdependence of the solar cell physical and geometrical parameters, ensuring the absoluteness of the optimized photovoltaic performances, the cell was optimized using a multivariate optimization algorithm that simultaneously optimizes eleven physical and geometrical parameters. We obtained an optimal efficiency of 24.4%, with a short circuit current J SC = 12.92 mA=cm 2 , an open circuit voltage V OC = 2.287 V and a fill factor FF = 82.55%. We then quantitatively investigated the impact on the solar cell performances of the internal polarization and structural defects in InGaN. We have shown that the internal polarization reduces the performance of the cell by inducing an electric field which does not favor an efficient collection of photo-generated carriers. We have also investigated the impact of structural defects in InGaN, including disorder and deep defects, and correlated their effect to the InGaN doping concentration.
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https://hal.univ-lorraine.fr/hal-01523515
Contributeur : Nicolas Fressengeas <>
Soumis le : vendredi 19 mai 2017 - 15:25:47
Dernière modification le : lundi 16 octobre 2017 - 16:57:14

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  • HAL Id : hal-01523515, version 1

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Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Influence of defect and polarization on efficiency of InGaN-based double-junction solar cell. Compound Semiconductor Week 2017 , May 2017, Berlin, Germany. 〈http://www.csw2017.org/〉. 〈hal-01523515〉

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