Effects of structural defects and polarization charges in InGaN-based double-junction solar cell

Abstract : The performance of a double heterojunction solar cell based on Indium Gallium Nitride (InGaN) including a tunnel junction was simulated. The most challenging aspects of InGaN solar cells development being the crystal polarization and structural defects detrimental effects, their impact on the solar cell performances has been investigated in detail. The solar cell simulation was performed using physical models and InGaN parameters extracted from experimental measurements. The optimum efficiency of the heterojunction solar cell was obtained using a multivariate optimization method which allows to simultaneously optimize eleven parameters. The optimum defect free efficiency obtained is 24.4% with a short circuit current J SC = 12.92mA/cm 2 , an open circuit voltage V OC = 2.29V and a fill factor FF = 82.55%. The performances evolution as functions of the polarization and the defects types and parameters was studied from their maximum down to as low as a 2% efficiency.
Complete list of metadatas

Cited literature [34 references]  Display  Hide  Download

https://hal.univ-lorraine.fr/hal-01513102
Contributor : Nicolas Fressengeas <>
Submitted on : Monday, April 24, 2017 - 4:20:41 PM
Last modification on : Friday, July 12, 2019 - 1:19:44 AM
Long-term archiving on : Tuesday, July 25, 2017 - 5:01:00 PM

Files

D-junction.pdf
Files produced by the author(s)

Identifiers

Relations

Citation

Abdoulwahab Adaine, Sidi Ould Saad Hamady, Nicolas Fressengeas. Effects of structural defects and polarization charges in InGaN-based double-junction solar cell. Superlattices and Microstructures, Elsevier, 2017, 107, pp.267-277. ⟨https://www.sciencedirect.com/science/article/pii/S0749603617309151⟩. ⟨10.1016/j.spmi.2017.04.025⟩. ⟨hal-01513102⟩

Share

Metrics

Record views

287

Files downloads

349