Skip to Main content Skip to Navigation
Journal articles

Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman

Abstract : The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time's growth affecting the thermal stress. Furthermore, we will focus on investigating the thermal stress' components and their distribution in crystal, which gives a detailed about the stress distribution and consequently on the distribution of defects during solidification of CdZnTe
Document type :
Journal articles
Complete list of metadatas

Cited literature [20 references]  Display  Hide  Download

https://hal.univ-lorraine.fr/hal-01598016
Contributor : Lermab Ul <>
Submitted on : Friday, September 29, 2017 - 10:34:36 AM
Last modification on : Tuesday, March 20, 2018 - 10:17:45 AM
Long-term archiving on: : Saturday, December 30, 2017 - 1:07:27 PM

File

ILCPA.55.66.pdf
Publisher files allowed on an open archive

Identifiers

Collections

Citation

Hanen Jamai, M. El Ganaoui, Habib Sammouda, Bernard Pateyron. Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman. International Letters of Chemistry, Physics and Astronomy, SciPress Ltd, 2015, 55, pp.67-79. ⟨10.18052/www.scipress.com/ILCPA.55.66⟩. ⟨hal-01598016⟩

Share

Metrics

Record views

152

Files downloads

400