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Article Dans Une Revue International Letters of Chemistry, Physics and Astronomy Année : 2015

Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman

Résumé

The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time's growth affecting the thermal stress. Furthermore, we will focus on investigating the thermal stress' components and their distribution in crystal, which gives a detailed about the stress distribution and consequently on the distribution of defects during solidification of CdZnTe

Domaines

Matériaux
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Dates et versions

hal-01598016 , version 1 (29-09-2017)

Identifiants

Citer

Hanen Jamai, M. El Ganaoui, Habib Sammouda, Bernard Pateyron. Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman. International Letters of Chemistry, Physics and Astronomy, 2015, 55, pp.67-79. ⟨10.18052/www.scipress.com/ILCPA.55.66⟩. ⟨hal-01598016⟩
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