Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman - Université de Lorraine Access content directly
Journal Articles International Letters of Chemistry, Physics and Astronomy Year : 2015

Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman

Abstract

The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time's growth affecting the thermal stress. Furthermore, we will focus on investigating the thermal stress' components and their distribution in crystal, which gives a detailed about the stress distribution and consequently on the distribution of defects during solidification of CdZnTe
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hal-01598016 , version 1 (29-09-2017)

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Hanen Jamai, M. El Ganaoui, Habib Sammouda, Bernard Pateyron. Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman. International Letters of Chemistry, Physics and Astronomy, 2015, 55, pp.67-79. ⟨10.18052/www.scipress.com/ILCPA.55.66⟩. ⟨hal-01598016⟩
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