Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode - Université de Lorraine Access content directly
Journal Articles Journal of Physics D: Applied Physics Year : 2016

Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode

C Vautrin
  • Function : Author
Y. Lu
  • Function : Author
S Robert
  • Function : Author
G. Sala
  • Function : Author
O. Lenoble
  • Function : Author
  • PersonId : 828474
S. Petit-Watelot
X. Devaux
F. Montaigne
D. Lacour
M. Hehn
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Dates and versions

hal-01654231 , version 1 (13-06-2019)

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C Vautrin, Y. Lu, S Robert, G. Sala, O. Lenoble, et al.. Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode. Journal of Physics D: Applied Physics, 2016, 49 (35), ⟨10.1088/0022-3727/49/35/355003⟩. ⟨hal-01654231⟩
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