Thickness and angular dependence of the magnetocurrent of hot electrons in a magnetic tunnel transistor with crossed anisotropies - Université de Lorraine Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2017

Thickness and angular dependence of the magnetocurrent of hot electrons in a magnetic tunnel transistor with crossed anisotropies

Michel Hehn
C. Vautrin
  • Function : Author
D. Lacour
G. Sala
  • Function : Author
Y. Lu
  • Function : Author
F. Montaigne

Abstract

We have studied the thickness and angular dependence of the magnetocurrent of hot electrons in a magnetic tunnel transistor (MTT) with crossed magnetic anisotropies. In a first step, we show that the magnetocurrent increases with ferromagnetic layer thickness as for MTTs with collinear magnetic configurations. The maximum magnetocurrent value is obtained to be 85%, which is close to the theoretical maximum value of 100% for MTTs with crossed magnetic configurations. In a second step, we demonstrate that we are able to reproduce both current vs field direction and current vs field intensity measurements in a framework taking into account a reduced number of magnetic parameters and a simple cosine dependence of the hot-electron current on the angle between magnetizations.
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hal-01686930 , version 1 (17-01-2018)

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Michel Hehn, C. Vautrin, D. Lacour, G. Sala, Y. Lu, et al.. Thickness and angular dependence of the magnetocurrent of hot electrons in a magnetic tunnel transistor with crossed anisotropies. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (17), pp.174426. ⟨10.1103/PhysRevB.96.174426⟩. ⟨hal-01686930⟩
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