Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies - Université de Lorraine
Journal Articles Advanced Electronic Materials Year : 2017

Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies

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Materials Science [cond-mat.mtrl-sci]

Michel HEHN  : Connect in order to contact the contributor

https://hal.univ-lorraine.fr/hal-01686949

Submitted on : Wednesday, January 17, 2018-11:39:04 PM

Last modification on : Thursday, April 11, 2024-1:08:13 PM

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hal-01686949 , version 1 (17-01-2018)

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Michel Hehn, Beata Taudul, Elmer Nahuel Monteblanco, Ufuk Halisdemir, Daniel Lacour, et al.. Tunneling Spintronics across MgO Driven by Double Oxygen Vacancies. Advanced Electronic Materials, 2017, 3 (7), ⟨10.1002/aelm.201600390⟩. ⟨hal-01686949⟩

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CNRS UNIV-LORRAINE INC-CNRS IJL-UL LUE-UL SITE-ALSACE IMPACT-N4S IJL-SPIN ANR
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