A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT

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https://hal.univ-lorraine.fr/hal-01761044
Contributor : Stéphane Raël <>
Submitted on : Saturday, April 7, 2018 - 3:15:43 PM
Last modification on : Sunday, April 8, 2018 - 11:44:08 PM

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Stéphane Rael, Bernard Davat. A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2008, 23 (5), pp.2585 - 2594. ⟨10.1109/TPEL.2008.2002092⟩. ⟨hal-01761044⟩

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