Journal Articles
IEEE Transactions on Power Electronics
Year : 2008
Stéphane Raël : Connect in order to contact the contributor
https://hal.univ-lorraine.fr/hal-01761044
Submitted on : Saturday, April 7, 2018-3:15:43 PM
Last modification on : Tuesday, April 25, 2023-4:48:23 PM
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Stéphane Rael, Bernard Davat. A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT. IEEE Transactions on Power Electronics, 2008, 23 (5), pp.2585 - 2594. ⟨10.1109/TPEL.2008.2002092⟩. ⟨hal-01761044⟩
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