A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT - Université de Lorraine
Journal Articles IEEE Transactions on Power Electronics Year : 2008

A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT

Domains

Electric power

Stéphane Raël  : Connect in order to contact the contributor

https://hal.univ-lorraine.fr/hal-01761044

Submitted on : Saturday, April 7, 2018-3:15:43 PM

Last modification on : Tuesday, April 25, 2023-4:48:23 PM

No file

Dates and versions

hal-01761044 , version 1 (07-04-2018)

Identifiers

Cite

Stéphane Rael, Bernard Davat. A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT. IEEE Transactions on Power Electronics, 2008, 23 (5), pp.2585 - 2594. ⟨10.1109/TPEL.2008.2002092⟩. ⟨hal-01761044⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

GREEN UNIV-LORRAINE EMPP-UL
22 View
0 Download

Altmetric

Share

More