A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT - Université de Lorraine Access content directly
Journal Articles IEEE Transactions on Power Electronics Year : 2008

A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT

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Electric power
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hal-01761044 , version 1 (07-04-2018)

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Stéphane Rael, Bernard Davat. A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT. IEEE Transactions on Power Electronics, 2008, 23 (5), pp.2585 - 2594. ⟨10.1109/TPEL.2008.2002092⟩. ⟨hal-01761044⟩
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