High-Frequency Surface Acoustic Wave Devices Based on Epitaxial Z-LiNbO3 Layers on Sapphire - Université de Lorraine Access content directly
Journal Articles Applied Physics Letters Year : 2019

High-Frequency Surface Acoustic Wave Devices Based on Epitaxial Z-LiNbO3 Layers on Sapphire

Abstract

Filter market demand pushes to the development of new piezoelectric materials to address modern telecommunication challenges. Composite wafers combining an epitaxial piezoelectric layer and a said high velocity and acoustic quality substrate is a promising way to answer that demand. However, the fabrication of high-quality LiNbO3 films with reproducible physical properties is complicated by the difficulty to control volatile Li2O incorporation into the film and to measure its composition. So far, large-scale production of films with physical properties suitable for the targeted applications is not available. In this paper, lithium niobate films with controlled nonstoichiometry were deposited by means of pulsed injection metalorganic vapor phase deposition. We have demonstrated a high acoustical performance for surface acoustic wave (SAW) devices operating in the frequency range from 3.7 GHz up to 5.3 GHz and based on grown epitaxial Z-axis oriented LiNbO3 films on sapphire. An electromechanical coupling of 8 % for the Rayleigh wave at 5.3 GHz was demonstrated experimentally
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Dates and versions

hal-02123712 , version 1 (08-05-2019)

Identifiers

Cite

Anthony Almirall, Stefania Oliveri, William Daniau, Samuel Margueron, Thomas Baron, et al.. High-Frequency Surface Acoustic Wave Devices Based on Epitaxial Z-LiNbO3 Layers on Sapphire. Applied Physics Letters, 2019, 114, pp.162905 (6). ⟨10.1063/1.5086757⟩. ⟨hal-02123712⟩
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