Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field - Université de Lorraine Accéder directement au contenu
Article Dans Une Revue Physical Review Applied Année : 2019

Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field

Résumé

The field-and current-induced magnetization reversal of a Co-Fe-B layer in a perpendicular magnetic tunnel junction (pMTJ) is studied at room temperature. The magnetization switching probability from the parallel (P) state to the antiparallel (AP) state and from AP to P is found to be asymmetric. We observe that this asymmetry depends on the magnetic configuration of the synthetic antiferromagnetic (SAF). The state diagram and the energy landscape are compared for two SAF configurations. We conclude that the asymmetry is due to the inhomogeneity of the fringe field generated by the SAF. Our study highlights the role of the reference-layer fringe field on the free layer's energy barrier height, which has to be carefully controlled for memory applications.
Fichier principal
Vignette du fichier
19 PR Appl - Lavanant.pdf (1.08 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-02184558 , version 1 (16-07-2019)

Identifiants

Citer

M. Lavanant, P. Vallobra, S. Petit-Watelot, V. Lomakin, A.D. D Kent, et al.. Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field. Physical Review Applied, 2019, 11 (3), ⟨10.1103/PhysRevApplied.11.034058⟩. ⟨hal-02184558⟩
43 Consultations
162 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More