Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field

Abstract : The field-and current-induced magnetization reversal of a Co-Fe-B layer in a perpendicular magnetic tunnel junction (pMTJ) is studied at room temperature. The magnetization switching probability from the parallel (P) state to the antiparallel (AP) state and from AP to P is found to be asymmetric. We observe that this asymmetry depends on the magnetic configuration of the synthetic antiferromagnetic (SAF). The state diagram and the energy landscape are compared for two SAF configurations. We conclude that the asymmetry is due to the inhomogeneity of the fringe field generated by the SAF. Our study highlights the role of the reference-layer fringe field on the free layer's energy barrier height, which has to be carefully controlled for memory applications.
Document type :
Journal articles
Complete list of metadatas

Cited literature [37 references]  Display  Hide  Download

https://hal.univ-lorraine.fr/hal-02184558
Contributor : Aurore Emonot <>
Submitted on : Tuesday, July 16, 2019 - 10:37:42 AM
Last modification on : Wednesday, August 14, 2019 - 10:46:03 AM

File

19 PR Appl - Lavanant.pdf
Publisher files allowed on an open archive

Identifiers

Citation

M. Lavanant, P. Vallobra, S. Petit Watelot, V. Lomakin, A.D. Kent, et al.. Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field. Physical Review Applied, American Physical Society, 2019, 11 (3), ⟨https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.034058⟩. ⟨10.1103/PhysRevApplied.11.034058⟩. ⟨hal-02184558⟩

Share

Metrics

Record views

13

Files downloads

17