Journal Articles
Materials Science Forum
Year : 2019
Jean-Philippe MARTIN : Connect in order to contact the contributor
https://hal.univ-lorraine.fr/hal-02337818
Submitted on : Tuesday, October 29, 2019-4:19:48 PM
Last modification on : Monday, April 15, 2024-6:20:02 PM
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- HAL Id : hal-02337818 , version 1
- DOI : 10.4028/www.scientific.net/MSF.963.592
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Dinh-Lam Dang, Matthieu Urbain, Stéphane Rael. Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling. Materials Science Forum, 2019, 963, pp.592-595. ⟨10.4028/www.scientific.net/MSF.963.592⟩. ⟨hal-02337818⟩
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