Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling - Université de Lorraine
Journal Articles Materials Science Forum Year : 2019

Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling

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Electric power
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hal-02337818 , version 1 (29-10-2019)

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Dinh-Lam Dang, Matthieu Urbain, Stéphane Rael. Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling. Materials Science Forum, 2019, 963, pp.592-595. ⟨10.4028/www.scientific.net/MSF.963.592⟩. ⟨hal-02337818⟩
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