Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling - Université de Lorraine
Conference Papers Year : 2018

Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling

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Engineering Sciences [physics] Chemical and Process Engineering Electric power

Stéphane Raël  : Connect in order to contact the contributor

https://hal.univ-lorraine.fr/hal-02936798

Submitted on : Friday, September 11, 2020-5:11:41 PM

Last modification on : Monday, April 15, 2024-6:20:02 PM

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hal-02936798 , version 1 (11-09-2020)

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  • HAL Id : hal-02936798 , version 1

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Dinh-Lam Dang, Matthieu Urbain, Stéphane Raël. Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling. 12th European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom. ⟨hal-02936798⟩

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