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Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling

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https://hal.univ-lorraine.fr/hal-02936798
Contributor : Stéphane Raël Connect in order to contact the contributor
Submitted on : Friday, September 11, 2020 - 5:11:41 PM
Last modification on : Friday, March 11, 2022 - 8:42:01 AM

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  • HAL Id : hal-02936798, version 1

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Dinh-Lam Dang, Matthieu Urbain, Stéphane Raël. Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling. 12th European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom. ⟨hal-02936798⟩

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