Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling - Université de Lorraine Access content directly
Conference Papers Year : 2018
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hal-02936798 , version 1 (11-09-2020)

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  • HAL Id : hal-02936798 , version 1

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Dinh-Lam Dang, Matthieu Urbain, Stéphane Raël. Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling. 12th European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom. ⟨hal-02936798⟩
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