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https://hal.univ-lorraine.fr/hal-02936798
Submitted on : Friday, September 11, 2020-5:11:41 PM
Last modification on : Tuesday, April 25, 2023-4:49:16 PM
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- HAL Id : hal-02936798 , version 1
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Dinh-Lam Dang, Matthieu Urbain, Stéphane Raël. Temperature dependency of Silicon Carbide MOSFET on-resistance characterization and modeling. 12th European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom. ⟨hal-02936798⟩
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