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Physical properties of ZnO on GaN by thermal evaporation

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https://hal.univ-lorraine.fr/hal-03165771
Contributor : Jérôme Slowensky <>
Submitted on : Wednesday, March 10, 2021 - 10:14:52 PM
Last modification on : Thursday, June 3, 2021 - 4:28:03 PM

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  • HAL Id : hal-03165771, version 1

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M. Bouchaour, R. Bensaha, F. Lekoui, N.-E. Chabane Sari, Nabila Maloufi. Physical properties of ZnO on GaN by thermal evaporation. International Conference NANOstructures and nanomaterials SElf-Assembly 2018 (7th edition), Jul 2018, Carqueiranne, France. ⟨hal-03165771⟩

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