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Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra

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https://hal.univ-lorraine.fr/hal-03424364
Contributor : Fabien Pascale Connect in order to contact the contributor
Submitted on : Wednesday, November 10, 2021 - 2:34:25 PM
Last modification on : Friday, November 19, 2021 - 4:42:16 PM

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Alexander Platonenko, Fabio Colasuonno, Francesco Silvio Gentile, Fabien Pascale, Roberto Dovesi. Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra. Journal of Chemical Physics, American Institute of Physics, 2021, 154 (17), pp.174707. ⟨10.1063/5.0044106⟩. ⟨hal-03424364⟩

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