Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra - Université de Lorraine Access content directly
Journal Articles Journal of Chemical Physics Year : 2021
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hal-03424364 , version 1 (10-11-2021)

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Alexander Platonenko, Fabio Colasuonno, Francesco Silvio Gentile, Fabien Pascale, Roberto Dovesi. Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra. Journal of Chemical Physics, 2021, 154 (17), pp.174707. ⟨10.1063/5.0044106⟩. ⟨hal-03424364⟩
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