Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure - Université de Lorraine Access content directly
Conference Papers Year : 2002
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hal-03565956 , version 1 (11-02-2022)

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J.-B. Kammerer, L. Hebrard, V. Frick, Philippe Poure, F. Braun. Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure. 9th International Conference on Electronics, Circuits and Systems (ICECS 2002), 2002, Dubrovnik, Croatia. pp.1123-1126, ⟨10.1109/ICECS.2002.1046449⟩. ⟨hal-03565956⟩
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