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Conference papers

Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure

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https://hal.univ-lorraine.fr/hal-03565956
Contributor : Philippe Poure Connect in order to contact the contributor
Submitted on : Friday, February 11, 2022 - 12:02:33 PM
Last modification on : Saturday, February 12, 2022 - 3:45:41 AM

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J.-B. Kammerer, L. Hebrard, V. Frick, Philippe Poure, F. Braun. Design and modelling of a voltage controlled N-well resistor using the MOS tunneling diode structure. 9th International Conference on Electronics, Circuits and Systems (ICECS 2002), 2002, Dubrovnik, Croatia. pp.1123-1126, ⟨10.1109/ICECS.2002.1046449⟩. ⟨hal-03565956⟩

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