Achieving a precise control of defects in chalcogenide semiconductors is paramount to optimizing their thermoelectric properties. Recently, p-type InTe has emerged as a potential candidate for thermoelectric applications in power generation, mainly due to its extremely low lattice thermal conductivity. Here, we show that the concentration of inherent In vacancies in both single-crystalline and polycrystalline InTe samples can be successfully controlled through saturation annealing. This process, performed on both the In-rich and Te-rich sides of the solidus line at 943, 893, 843, and 943 K, respectively, results in variations in the hole concentration from 4.9 to 8.5×10¹⁹ cm^–3 at 300 K. This narrow density range suggests that the defect chemistry in InTe plays a less critical role in determining its thermoelectric properties compared to other state-of-the-art thermoelectric chalcogenides. The increased partially degenerate character of transport with increasing annealing temperature lowers the thermoelectric performance, with a peak ZT value of 0.9 achieved at 710 K in as-synthesized InTe.