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Journal Articles Optical and Quantum Electronics Year : 2014

Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications

Abstract

Undoped and aluminum-doped ZnO thin films are prepared by the sol–gel spin-coating process. Zinc acetate dihydrate, ethanol and mono-ethanolamine are used as precursor, solvent and stabilizer, respectively. The atomic percentage of dopant in solution were [Al/Zn] = 1 %, 2 % and 3 %. The effect of Al doping on the optical and electrical properties of ZnO films was investigated by X-ray diffraction (XRD), Four-Point probe technique and UV–visible spectrophotometery. The results from the X-ray diffraction show that the pure ZnO thin films had a polycrystalline structure of the hexagonal Wurtzite Type. A minimum resistivity of 3.3×10−3Ω⋅cm was obtained for the film doped with 2 mol % Al. Optical transmissions reveal a good transmittance within the visible wavelength spectrum region for all of the films. The value of the band gap is enhanced from 3.21 eV (undoped ZnO) to 3.273 eV (Al/Zn = 3 %), the increase in the band gap can be explained by the Burstein–Moss effect.

Dates and versions

hal-04011557 , version 1 (02-03-2023)

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Youssef Ammaih, Abderrazak Lfakir, Bouchaib Hartiti, Abderraouf Ridah, Philippe Thevenin, et al.. Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications. Optical and Quantum Electronics, 2014, 46 (1), pp.229-234. ⟨10.1007/s11082-013-9757-2⟩. ⟨hal-04011557⟩
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