Gd Doping at the Co/Pt Interfaces to Induce Ultrafast All-Optical Switching - Université de Lorraine
Journal Articles ACS Applied Electronic Materials Year : 2024

Gd Doping at the Co/Pt Interfaces to Induce Ultrafast All-Optical Switching

Michel Hehn
Grégory Malinowski
J. Ghanbaja
Julius Hohlfeld
Jon Gorchon
Stéphane Mangin
Francois Montaigne

Abstract

Single-pulse all-optical switching has mainly been observed and studied in transition-metal-Gd-based thin films with high potential for enabling new application for energy-efficient and fast magnetic data storage, memory, or logic. For GdCo alloys, ultrafast single-pulse switching has only been observed close to the compensation composition, in agreement with theoretical predictions. Here, we demonstrate that starting with a [Co/Pt] bilayer showing strong perpendicular anisotropy, a small Gd dusting at the interface is sufficient to induce a well-defined single-pulse all-optical switching. A careful analysis of the impact of the Gd–Co interface on all optical switching is presented. The opportunity to perform single-pulse all-optical switching with a very little amount of Gd opens perspectives for its applicability but also questions the theoretical understanding of the toggle switching underlying mechanism.
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Dates and versions

hal-04462400 , version 1 (16-02-2024)

Identifiers

Cite

Danny Petty Gweha Nyoma, Michel Hehn, Grégory Malinowski, J. Ghanbaja, Julius Hohlfeld, et al.. Gd Doping at the Co/Pt Interfaces to Induce Ultrafast All-Optical Switching. ACS Applied Electronic Materials, 2024, 6 (2), pp.1122-1128. ⟨10.1021/acsaelm.3c01534⟩. ⟨hal-04462400⟩
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