This work reports the feasibility of thermoelectric thin films synthesis via a new aqueous chemical deposition process. Bismuth telluride thin films have been prepared using this method. A bath containing the dissolved precursors in acidic solution was used. The reaction generated between the bismuth and the tellurite ions on an electrodeposited Ni° on stainless steel substrate gave Bi2Te3 thin films. The reaction took place at ambient temperatures with stirring with different ratios of [BiIII]/[TeIV] ions. The tellurite ion concentration was fixed to 5.10−3 mol/l in HNO3 1 mol/l. The films formed were bright and adhesive to the substrate. It was shown that the composition of the deposited film is influenced by the composition of the chemical bath. The products characterized by X-ray diffraction were polycrystalline; the morphology of the film examined by scanning electron microscopy showed a compact structure. The thickness of the film determined by observation of the section by electronic microscopy was about 4 μm thickness.