Characterizing threading dislocations (TDs) in gallium nitride (GaN) semiconductors is crucial for ensuring the quality, performance, and reliability of semiconductor devices and advancing the field of materials science and device technology. The current research addresses this issue by combining two techniques using a scanning electron microscope (SEM), namely electron channeling contrast imaging (ECCI) and high-resolution electron backscattered diffraction (HR-EBSD). It is a comparative study of these techniques to underscore how they perform in the evaluation of TD densities in GaN epitaxial layers. Experiments reveal that the dislocation line vectors mostly deviate from the growth direction of the film i.e. ∦ [0001], followed by edge-type dislocations (dislocation lines || [0001]) with insignificant screw character. Furthermore, TDs from the dislocation clusters are characterized as edge- and (edge+mixed)-type TDs. By combining ECCI counting of dislocations and HR-EBSD description of geometrically necessary dislocation density type, it is possible to measure the total TD density and provide the proportion of pure (edge and screw) and mixed TDs. It has also been observed from the analyses of residual elastic strain fields and lattice rotations that it is not possible to identify individual dislocations for the spatial resolution of 50 nm in HR-EBSD. Nevertheless, ECCI and HR-EBSD can be complementarily used to count and characterize the TDs.