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Corrélation entre propriétés structurales et propriétés de luminescence de films minces d'oxyde et de nitrure de silicium élaborés par évaporation

Abstract : In this work, we have studied silicon oxide and pure or hydrogenated silicon nitride thin films, respectively prepared by evaporation of silicon in a molecular oxygen atmosphere or under a flow of nitrogen and hydrogen ions. The different films are subsequently anncaled up to 1100°C in a vacuum atmosphere. The structural characterization are made using infrared absorption, Raman and X-ray photoemission spectroscopies, grazing angle X-ray diffraction and transmission electron microscopy. The prepared samples exhibit photoluminescence in the visible range and at room temperature. The origin of the photon emission is correlated to the structural properties of the films. Two photoluminescence mechanisms are identified : the mechanism of tail-to-tail recombination and the mechanism of quantum confinement in the silicon grains with a nanometric size embedded in a insulating matrix.
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http://docnum.univ-lorraine.fr/prive/SCD_T_2002_0147_MOLINARI.pdf
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Submitted on : Thursday, March 29, 2018 - 10:43:15 AM
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Michaël Molinari. Corrélation entre propriétés structurales et propriétés de luminescence de films minces d'oxyde et de nitrure de silicium élaborés par évaporation. Autre [cond-mat.other]. Université Henri Poincaré - Nancy 1, 2002. Français. ⟨NNT : 2002NAN10147⟩. ⟨tel-01746718⟩

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