Dépôt par pulvérisation magnétron de couches minces de nitrure d'aluminium à axe C incliné en vue de la réalisation de dispositifs à ondes acoustiques vibrant en mode de cisaillement

Abstract : The excitation and propagation, in liquid media, of shear waves in surface acoustic wave (SAW) devices based aluminum nitride (AlN) require the inclination of the c axis in the hexagonal structure. The purpose of this study was to deposit tilted c-axis AlN thin films by magnetron sputtering technique without any modification of the deposition system. The search approach was based only on the optimisation of deposition parameters. Substrate and the target were not inclined or shifted. It has been possible through an approach based solely on changes in growth parameters, to deposit thin piezoelectric layers with an inclination angle of 13 ° ± 2 ° under conditions of high pressure (0.8 Pa) and low temperature ( 300 ° C). A thin layer of SiO2 was also introduced to enhance the growth of tilted grains and therefore the columns. The deposited layers have a homogeneous thickness of 75% of a silicon substrate of 3 inches. After determining the optimal parameters leading to growth AlN film with tilted c-axis, we achieved a SAW device and hence demonstrate the ability to excite shear waves in AlN/Si02 /Si SAW structure. The performed device operate at 486.2 MHz corresponding to an acoustic velocity of about 5835m/s and an electromechanical coupling coefficient of 0.014%. The obtained electrical response is very interesting if we take into account the low electromechanical coupling of the structure due to the used substrate.
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Amina Zahia Fardeheb. Dépôt par pulvérisation magnétron de couches minces de nitrure d'aluminium à axe C incliné en vue de la réalisation de dispositifs à ondes acoustiques vibrant en mode de cisaillement. Autre. Université Henri Poincaré - Nancy 1, 2009. Français. ⟨NNT : 2009NAN10115⟩. ⟨tel-01748461⟩

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