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Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l'interface

Abstract : Diamond is a wide band gap semiconductor which is very promising, especially in electronics or in radiodetection.Our study is focused in particular on the production of heteroepitaxial diamond films on silicon substrates. In fact, this association is a major issue because of the wide use of silicon in microelectronics. Films are produced by microwave plasma assisted chemical vapour deposition (MPCVD), with a bias procedure (BEN) which enable us to initiate nucleation. Our aim is to achieve a better epitaxial rate of the diamond crystals and also a better density, which are two decisive criteria for the quality of highly oriented diamond films. SEM, AFM, XPS and RHEED analyses have shown that the formation of an intermediary silicon carbide layer by in situ carbonization provides important advantages but that the bias procedure should be short in order to avoid a deterioration of this layer. Moreover, we noticed that the use of a low methane concentration prevents a defective growth of the diamond crystal. These adjustments allowed us to raise the epitaxial rate from 10 to 45 % but, on the other hand, the density decreased. To compenate for this density drop, the state of the substrate surface can be improved, by optimizing its structure through a plasma pretreatment (density mutiplied bu 20) or by preparing a layer of monocrystalline silicon carbide. In this last case, we obtained a diamond nucleation forming domains, which is unusual on silicon carbide but very promising. Consequently, our work shows how to directly improve the quality of the diamond nucleation. This paves the way to the production on silicon of thinner diamond films with better crystal quality.
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Cyril Sarrieu. Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l'interface. Autre. Institut National Polytechnique de Lorraine, 2011. Français. ⟨NNT : 2011INPL093N⟩. ⟨tel-01749544⟩

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