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Étude, élaboration et caractérisation d'hétérostructures «auto-protégées» à base d'ondes élastiques

Abstract : The objective of this thesis is to realize heterostructures packageless through a protective layer against harmful atmospheric environments such as oxidation and moisture and also in aggressive environments (high temperatures). The first heterostructure considered in this study, uses the principle of wave isolated. Silicon was used in combination with ZnO as it offers good performances and the possibility to work at high frequencies. Thus, this configuration AlN/IDT/ZnO/Si was chosen for applications in environments with harmful and integrated in CMOS technology. In addition, a protective layer of AlN allows the wave is confined in the active layer of ZnO and remains insensitive to the surface but sensitive to temperature. However, ZnO is conductive at high temperature (> 400 ° C) wich is limited her utilization in harsh environments. This is why a second packageless heterostructure using the IDT/AlN/sapphire has been studied in this manuscript. It is therefore to protect the IDTs by a thin film against the phenomena of agglomeration of the electrodes at high temperatures (1000 ° C)
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Submitted on : Thursday, March 29, 2018 - 12:20:56 PM
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Ouarda Legrani. Étude, élaboration et caractérisation d'hétérostructures «auto-protégées» à base d'ondes élastiques. Autre [cond-mat.other]. Université de Lorraine, 2012. Français. ⟨NNT : 2012LORR0186⟩. ⟨tel-01749602⟩



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