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Étude et caractérisations par cathodoluminescence de couches minces d'InGaN pour le photovoltaïque

Abstract : GaN and its ternary and quaternary alloys Ga(B, In, Al)N have become in recent years one of the most important semiconductor materials for applications in optoelectronics. More specifically, the InGaN alloy, that has a band gap energy (0.77eV for InN, 3.4eV for GaN) allowing almost full absorption of the visible spectrum can be an excellent candidate for the realization of highly efficient multi-junctions solar cells. However, the growth of InGaN epitaxial layers with high indium content and good structural and morphological quality remains a challenge. Our group was among the first to meet this challenge by proposing an original growth technique consisting in the periodical insertion of thin GaN layers in the thick InGaN layer. The present work falls in this context and focuses on the morphological, structural and optical characterization of different InGaN structures that have been developed, allowing the optimization of the growth process and the obtention of InGaN layers with an indium content of 15%, a thickness of 120nm and a high structural and optical quality. The main aspect of the present work consist in the implementation and use of the cathodoluminescence technique to study the InGaN materials grown by our group using MOVPE. The main achievements of this work, in addition to the contribution to the success of getting high quality InGaN layers, relate to the confirmation of the growth mode of InGaN layers (2D - 3D transition, type and role of surface inclusions), the determination of the critical layer thickness according to the indium content, and the modeling of the cathodoluminescence phenomenon using Monte Carlo method
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Youssef El Gmili. Étude et caractérisations par cathodoluminescence de couches minces d'InGaN pour le photovoltaïque. Autre [cond-mat.other]. Université de Lorraine, 2013. Français. ⟨NNT : 2013LORR0228⟩. ⟨tel-01750596⟩

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