Characterization and improvement of silicon solar cells : enhanced light acceptance and better separation and extraction of charge-carriers

Abstract : This work studies Silicon nitride and its electrical passivation and anti-reflection properties on n-type and p-type mono crystalline silicon for its use as light entrance window of an inverted a-Si:H/c-Si heterocontact solar cell in the frame of the development of low cost, high efficiency solar cells. Comparative investigation on silicon dioxide and amorphous silicon coatings were performed. Silicon nitride is deposited by plasma enhanced chemical vapour deposition and was investigated by various measurement methods. The modifications induced by variation of the precursor gas mixture (silane, ammoniac and nitrogen) on the composition were measured by Elastic Recoil Detection Analysis (ERDA). Correlation between the composition and the optical and electrical properties were studied (Fourier Transform InfraRed (FTIR) spectroscopy, XPS, ?) and simulated. Evolution of the thickness and refractive indices were measured by ellipsometry.Measurements of the reflection, absorption and transmission were performed with spectroscopy. Time Resolved Microwaves Conductivity (TRMC) was used as a non-destructive method to determine the electrical passivation effect due to silicon nitride. Optimum deposition parameters were found in order to obtain the best electrical passivation (surface recombination velocity <20 cm.s-1) and the minimum reflection (0.03% of reflection for l = 560 nm). Reproducibility of the deposition method and behaviour of the layers for different pre-treatment and under annealing were also investigated
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David Klein. Characterization and improvement of silicon solar cells : enhanced light acceptance and better separation and extraction of charge-carriers. Other [cond-mat.other]. Université Paul Verlaine - Metz, 2009. English. ⟨NNT : 2009METZ003S⟩. ⟨tel-01752618⟩

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