Étude de la pulvérisation et de l'émission de la matière sous bombardement Cs+

Abstract : The Storing Matter technique aims at optimising the sensitivity and quantitativeness of SIMS analysis. It consists in decoupling the sputtering of the specimen from the subsequent analysis step. The specimen is sputtered by means of an ion beam. The emitted particles are deposited at a sub-monolayer level on an optimised collector. The deposit is subsequently analysed in a SIMS instrument. The ionisation probability in SIMS does not depend anymore on the initial sample composition (Matrix effect), but on the collector surface chemistry. The collector is chosen in order to increase the sensitivity and to quantify the specimen. The efficiency of this new technique depends on the collector choice and on the collection factor [gamma] characterising the sputter-deposition step. In this work, the sputtering and emission processes under ionic bombardment have been studied in order to optimise this factor [gamma]. We developed an experimental set-up and an analysis protocol based on SIMS that allows us to study the angular distribution under Cs+ bombardment with an oblique incidence for different impact parameters. Four targets (Si, Ge, InP and GaAs) were studied. The results show that the angular distribution is shaped as a cosine function cosn ( [thêta]-[thêta] Max) for impact energies between 2 and 10 keV and for incidence angles from 30 to 60°. Under these conditions, the exponent n is ~2 and the preferential direction of emission [thêta] Max varies from the normal to the surface to 35° in the specular direction in function of the impact energy and the incidence angle. The results allowed to find the best settings for the Storing Matter technique to control the sputtered matter collection in function of the bombardment parameters
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Christophe Verdeil. Étude de la pulvérisation et de l'émission de la matière sous bombardement Cs+. Autre. Institut National Polytechnique de Lorraine, 2008. Français. ⟨NNT : 2008INPL054N⟩. ⟨tel-01753023⟩

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