Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt

Abstract : The goal of this study is to better apprehend the phenomena governing bias assisted MPCVD diamond epitaxy on silicon. It is organized into two main parts: a first qualitative approach on the reactivity of the substrate and a second approach more quantitative related to the pretreatment stages influence on the deposit. The importance of a rigorous protocol is put forward in this work. The role of the various stages of silicon substrates preparation going from ex situ cleaning, in situ cleaning (plasma H2), bias until diamond growth was studied thanks to investigations techniques such as transmission and scanning electron microscopies, X-ray photoelectrons spectroscopy, atomic force microscopy, reflexion high energy electrons diffraction. These analyses highlighted the appearance of structures of the type voids associated with the silicon carbide formation from the hydrogen etching stage. The amorphous carbon formation in the first moments of diamond nucleation seems to be correlated with the diamond quantity measured after growth, the importance of ions flow during nucleation stage on the densities was shown in parallel. Epitaxy ratio up to 30% were reached thanks to the optimization of the couple time/biasing or carburation of the substrate preceding bias. The convergent beam electron diffraction analysis of diamond films appeared well adapted to the statistical study of crystals orientation
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Aurore Guise. Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt. Autre. Institut National Polytechnique de Lorraine, 2008. Français. ⟨NNT : 2008INPL076N⟩. ⟨tel-01753024⟩

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