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Étude des effets des irradiations neutron sur des structures MOS, technologie N-MOS, par spectroscopie DLTS mesures capacitives

Abstract : The study of radiation effects on electronic devices is generally concened with thestudy of MOS structures (capacitors or transistors) due to their widespread use. In this work, a study before and after neutron irradiation of MOS structures, N-MOS process manufactured by THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES, is presented. It consists in the analysis of the structures parameters changes due tu radiation. The work was thus articulated along two principal axis : The first one is devoted to the before preradiation study. This study was undertaken on PMOS capacitors and NMOSFETs transistors by simultaneously using measurements of the capacitance according to bias and to tinie. DLTS spectroscopy analysis is performed. Various characteristic parameters of the structures are determined, mainly the origins of the dark current. The effects of doping and oxide thickness are studied. A new method based mainly on the DLTS spectroscopy to determine the parameters of generation of the minority carriers is presented. The second axis consists in the study, postradiation, of the structures. The effect of the neutron fluence was considered. The degradation of parameters increases with fluence. The defects created in the semiconductor were detected by using DLTS and OLDTS spectroscopies. Their signatures (activation energy, capture cross section and density of the defects) were calculated. The evolution of the minority carrier generation parameters was also considered taking into account the introduced variations when the type of structures (capacity or transistor) or the oxide thickness change
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Abdelaziz Ahaitouf. Étude des effets des irradiations neutron sur des structures MOS, technologie N-MOS, par spectroscopie DLTS mesures capacitives. Autre. Université Paul Verlaine - Metz, 1999. Français. ⟨NNT : 1999METZ033S⟩. ⟨tel-01775777⟩

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