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Etude par spectroscopie DLTS des transitoires de capacité sur les interfaces oxydes natifs-(n) InP

Abstract : The topic of this thesis was to investigate the energy distribution of defects, their localisation at the interface between indium phosphide and its native oxide, inside the oxide or in the bulk of the semiconductor. The results can be summarized in three points : 1) analysis by deep level transient spectroscopy (DLTS) of RF plasma native oxide-InP interface ; 2) Study by DLTS of the : effect of chemical oxidation with liquid or vapour phase nitric acid and comparison with non oxidized structures ; effect of heat treatments ; 3) results : DLTS spectra measured on all structures show discret peaks between 80K and 300K and a wide peak which appears at hight temperature. Some anomalies appears on these spectra. A two component model, including the variation of the capture cross section deduced from experiment and which correspond to a multiphonon emission process is proposed. This model fits all experimental DLTS spectra with a good accuracy. The configuration diagram is used to modelize the defects. A physical origin is proposed for the observed defects
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Azzedine Telia. Etude par spectroscopie DLTS des transitoires de capacité sur les interfaces oxydes natifs-(n) InP. Autre. Université Paul Verlaine - Metz, 1990. Français. ⟨NNT : 1990METZ012S⟩. ⟨tel-01775863⟩

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