Effet d'un champ magnétique sur les complexes excitoniques dans les semi-conducteurs massifs à symétrie cubique

Abstract : We have studied the effect of a magnetic field on an exciton bound to an acceptor impurity atom. In an isotropic two bands model, we have calculated the mean interparticle distances in order to evaluate the validity of the pseudo-donor model. By using a perturbation method for the low field case, we have shown that the diamagnetic shifts of a free exciton and of a neutral impurity bound exciton may be similar for some values of the masses electron to hole ratio, in agreement with experimental data. In the high field limit, we have used an adiabatic method by separating the parallel and perpendicular motions cannot be separated so we have used a variationnal method to solve the problem. In order to take into account the eal structure of the crystal, we have searched the hamiltonian of the impurity bound exciton by using the theory of invariants. We have considered a cubic semiconductor in a magnetic field with exchange interactions between particles. In the case of GaAs, we have estimated the shift of degeneracy of the energy levels of the complex and impurity levels. The comparison between these results and experimental data may be used to confirm the structure of the complexes and to evaluate the band parameters of the semiconductor
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Francis Dujardin. Effet d'un champ magnétique sur les complexes excitoniques dans les semi-conducteurs massifs à symétrie cubique. Autre [cond-mat.other]. Université Paul Verlaine - Metz, 1992. Français. ⟨NNT : 1992METZ028S⟩. ⟨tel-01775989⟩

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