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Contribution à l'étude des propriétés électroniques des structures M.I.S. sur InP (Au/BN/InP)

Abstract : The aim of the present work is the implementing of electrical characterization methods which permit to assess the quality of MIS structures and to better understand some observed anomalies. The investigated samples were formed by an R.F. plasma-enhanced chemical vapor deposition (PECVD) technique, the InP substrate being situated either inside the plasma zone (samples DP) or outside the plasma zone (samples HP). A study essentially qualitative of electrical instabilities has been made from two points of view. The first concerns the hysteresis behavior of 1 MHz C(Vg) curves and its dependence on the magnitude of the voltage excursion and the sweep rate. The second is relative to time dependence of drift phenomena at various temperatures. The major feature illustrated by this study, at 300 K, is the prevailing effect of negative charge trapping in the insulator. However, at 400 K, the most important effect is the ionic transport in the insulator. Based on these observations, we have tried to gather informations on the fixed charges and the mobile ions in the insulator at 400 K (signs, concentrations and positions at equilibrium). The frequency dispersion phenomena have been studied, and several models have been used to explain the experimental results. The frequency dispersion in accumulation, for the sample DP, can be interpreted as being due to leakage currents in the insulator. For the sample HP, this phenomena can be attributed primarily to the direct capture of tunneling electrons by insulator traps (model of Mui & al). In depletion, the frequency dispersion can be interpreted as being due to indirect tunneling of electrons into gap states located in the insulator (Preier's model). At last, the density of interfaces states Nss is evaluated from 1 MHz C(Vg) plots (Terman method) and from DLTS results. For the sample HP, a minimum value of about 2x10(11) cm-2 eV-1 is obtained by the Terman analysis. Ours results show clearly the better quality of the structures HP
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  • HAL Id : tel-01777084, version 1



Mohammed Barrada. Contribution à l'étude des propriétés électroniques des structures M.I.S. sur InP (Au/BN/InP). Matière Condensée [cond-mat]. Université Paul Verlaine - Metz, 1995. Français. ⟨NNT : 1995METZ030S⟩. ⟨tel-01777084⟩



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