Modélisation, étude, réalisation d'un interféromètre in-situ, temps réel destiné aux mesures dimensionnelles des puces électroniques submicroniques pendant un procédé de gravure ou de dépot

Abstract : Permanent progress in the semiconductor industry is essentially linked to a continous rise in integration capacity, to smaller circuit dimensions and larger silicon wafer diameters. In order to remain competitive, the performance of submicron device manufacturing lines employing complex process which are difficult to master has to be optimised. It is understandable under these conditions that in-situ and real time control of circuit thickness during the etch or deposition operation gives a serious advantage over competitors. Among the optical in-situ non intrusive and non destructive methods, spectroscopic interferometry at normal incidence allows the measurement of the thickness of layers present on the silicon wafer during manufacturing. This study has been performed in two parts : the measurement principle and manufacturing control. For the measurement principle, the optical properties of multi-layer system have been studied using the Abeles formalism. For the manufacturing control, we conceived and built an instrument allowing to position the interferometric head relativity limited measurement sites located on the silicon wafer. To do this, the site has to be recognized and the camera be positioned with a precision adapted to the site dimensions. An imaging module including in particular a pattern recognition routine and the steering of a motorized xy table, have been studied and integrated into the unit of layer thickness calculation
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Bruno Augé. Modélisation, étude, réalisation d'un interféromètre in-situ, temps réel destiné aux mesures dimensionnelles des puces électroniques submicroniques pendant un procédé de gravure ou de dépot. Autre. Université Paul Verlaine - Metz, 1997. Français. ⟨NNT : 1997METZ028S⟩. ⟨tel-01777213⟩

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