Rare earth-doped aluminum nitride thin films for optical applications

Abstract : This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin films. More particularly, the work is oriented to investigate the luminescence mechanisms of selected RE elements incorporated in AlN thin films to be used as a candidate for lighting devices. During this thesis, reactive magnetron sputtering (RMS) technique is used to synthesize the undoped and doped AlN thin films. The technique and films processing are discussed in details. The effect of sputtering conditions on the structure and optical properties of the prepared films are investigated. The correlation between the sputtering conditions, the crystallographic orientation, the morphology, the microstructure and the optical properties are established. The structure and composition analyses of the prepared samples have been investigated by several means, such as transmission electron microscopy (TEM), Energy-dispersive X-ray spectroscopy (EDS), and Rutherford backscattering spectrometry (RBS). The optical properties of the films are characterized by UV-Visible transmission, Ellipsometry spectroscopy, and Photoluminescence spectroscopy
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Alaa Eldin Giba. Rare earth-doped aluminum nitride thin films for optical applications. Optics / Photonic. Université de Lorraine; Universität des Saarlandes, 2018. English. ⟨NNT : 2018LORR0005⟩. ⟨tel-01919774⟩

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