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Croissance et caractérisation de nitrures ZnGeN2 pour applications optoélectroniques

Abstract : The II-IV-nitrides ZnSiN2, ZnGeN2 and ZnSnN2 represent a semiconductors family close to the III-nitrides (GaN and its aluminum and indium containing alloys). They are obtained by replacing periodically the group III element (Ga) by a group II element (Zn) and by a group IV element (Si, Ge or Sn), its left and right neighbors in the periodic table. The crystalline structure of ZnGeN2 is therefore really close to the one of wurtzite GaN. They show a lattice mismatch smaller than 1 %. The band gap of ZnGeN2 is almost identical to GaN and their large band offset enables the design of a type II heterostructure. These data set the stage for the theoretical study of II-IV-N2 integration into the active zones of GaN LEDs. These type II quantum wells could contribute to enhance the emission properties of GaN-based light emitters at high wavelengths (green and beyond). The ZnSn{x}Ge{1-x}N2 alloy (with x = 0 to x = 1) being rather unknown, the objective of this thesis is the experimental study of sputtered thin films of this material. Its structural, optical and electrical properties are investigated through different analysis methods. It seems possible to adjust its lattice parameter a (from 3.22 A to 3.41 A) as well as its band gap (from 2.1 eV for ZnSnN2 to 3.0 eV for ZnGeN2) but also its electrical properties on several orders of magnitude. The use of GaN substrates enables the investigation of the interface between both materials and quasi-epitaxy effects.
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Submitted on : Tuesday, May 28, 2019 - 9:11:10 AM
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Nicole Beddelem. Croissance et caractérisation de nitrures ZnGeN2 pour applications optoélectroniques. Science des matériaux [cond-mat.mtrl-sci]. Université de Lorraine, 2019. Français. ⟨NNT : 2019LORR0029⟩. ⟨tel-02141628⟩



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