Half-metal magnets Heusler compounds for spintronics

Abstract : Improvements in thin film elaboration methods and a deeper understanding of condensed matter physics have led to new exciting phenomena in spin electronics (spintronics). In particular, magnetization reversal by spin-orbit and spin-transfer torque as well as the development of spin waves based devices have placed the Gilbert magnetic damping coefficient as a key parameter for future data storage and information processing technologies. The prediction of ultralow magnetic damping in Co2MnZ Heusler half-metal magnets is explored in this study and the damping response is shown to be linked to the underlying electronic structure. By substitution of the Z element in high quality Co2MnZ (Z=Al, Si, Ga, Ge, Sn and Sb) epitaxial thin films grown by molecular beam epitaxy, electronic properties such as the minority-spin band gap, Fermi energy position in the band gap, and spin polarization can be tuned and the consequences for magnetization dynamics analyzed. Experimental results allow us to directly explore the interplay of spin polarization, spin gap and Fermi energy position, with the magnetic damping obtained in these films (together with predictions from ab initio calculations). The ultralow magnetic damping coefficients measured in the range from 4.1 x10-4 to 9 x10-4 for Co2MnSi, Co2MnGe, Co2MnSn and Co2MnSb are the lowest values ever reported in conductive layers and offer a clear experimental demonstration of theoretical predictions on half metal magnetic Heusler compounds. Then, the relation between the Gilbert damping and the ultrafast demagnetization time in quaternary Co2MnSixAl1-x compounds with a tunable spin polarization is analyzed. This way, it is possible to confront theoretical models unifying those two quantities that live in different timescales. Finally, structural and magnetic properties of Mn3Ga/Co2YZ Heusler superlattices are investigated in order to combine ultralow Gilbert damping coefficient, minority spin band gap and perpendicularly magnetized heterostructures, another requirement for low energy consumption devices. Through the present work, we aim to prove that Heusler compounds provide an excellent playground to study fundamental magnetism and offer a pathway for future materials design.
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Theses
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http://docnum.univ-lorraine.fr/ulprive/DDOC_T_2019_0110_GUILLEMARD.pdf
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https://hal.univ-lorraine.fr/tel-02397913
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Submitted on : Friday, December 6, 2019 - 5:26:21 PM
Last modification on : Saturday, December 7, 2019 - 1:42:08 AM

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  • HAL Id : tel-02397913, version 1

Citation

Charles Guillemard. Half-metal magnets Heusler compounds for spintronics. Materials Science [cond-mat.mtrl-sci]. Université de Lorraine, 2019. English. ⟨NNT : 2019LORR0110⟩. ⟨tel-02397913⟩

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