Crystallographic orientation of modulated martensite in epitaxially grown Ni-Mn-Ga thin film - Université de Lorraine Access content directly
Journal Articles Thin Solid Films Year : 2015

Crystallographic orientation of modulated martensite in epitaxially grown Ni-Mn-Ga thin film

Abstract

In this work, local crystallographic orientation of seven-layer modulated (7M) martensite correlated with microstructure in Ni-Mn-Ga thin films was revealed by electron backscatter diffraction. The microstructure of 7M martensite can be classified into two distinct groups, i.e. the low and high relative contrast zones. There are four crystallographically orientated martensite plates in each variant group. Each martensite plate is composed of one 7M martensite variant. In the low relative contrast zone, all the four variants are with their (2 0 20)(mono) plane nearly parallel to the substrate surface. In the high relative contrast zone, there are two variants with their (2 0 (20) over bar)(mono) plane nearly parallel to the substrate surface and two variants with their (0 4 0)(mono) plane nearly parallel to the substrate surface. Crystallographic calculation indicates that the four 7M martensite variants are twin related.
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Dates and versions

hal-01514145 , version 1 (25-04-2017)

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Bo Yang, Yudong Zhang, Zongbin Li, Gaowu Qin, Claude Esling, et al.. Crystallographic orientation of modulated martensite in epitaxially grown Ni-Mn-Ga thin film. Thin Solid Films, 2015, 584, pp.90-93. ⟨10.1016/j.tsf.2014.11.073⟩. ⟨hal-01514145⟩
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