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Optically Induced Phase Change for Magnetoresistance Modulation

Abstract : Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed data storage and processing, which have become an emerging field of spintronics. However, a widely applicable and efficient method has rarely been demonstrated. Here, the strongly correlated electron material vanadium dioxide (VO 2) is used to realize the optically induced phase change for control of the magnetism in NiFe. The NiFe/VO 2 bilayer heterostructure features appreciable modulations of electrical conductivity (32%), coercivity (37.5%), and magnetic anisotropy (25%). Further analyses indicate that interfacial strain coupling plays a crucial role in the magnetic modulation. Utilizing this heterostructure, which can respond to both optical and magnetic stimuli, a phase change controlled anisotropic mag-netoresistance (AMR) device is fabricated, and reconfigurable Boolean logics are implemented. As a demonstration of phase change spintronics, this work may pave the way for next-generation opto-electronics in the post-Moore era.
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https://hal.univ-lorraine.fr/hal-02860979
Contributor : Aurore Emonot <>
Submitted on : Wednesday, February 10, 2021 - 9:56:06 AM
Last modification on : Thursday, February 25, 2021 - 11:05:02 AM

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Guodong Wei, Xiaoyang Lin, Zhizhong Si, Dong Wang, Xinhe Wang, et al.. Optically Induced Phase Change for Magnetoresistance Modulation. Advanced Quantum Technologies, Wiley, 2020, ⟨10.1002/qute.201900104⟩. ⟨hal-02860979⟩

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