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Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation

Abstract : Spintronic interfaces (spinterfaces) with dramatically changeable electronic properties can be a magic building block in spintronics. In this work, we study the interlayer exchange coupling (IEC) effect in a synthetic magnetic multilayer system, where atomically thin phase-change material VO 2 is adopted as a spinterface with reversible metal-to-insulator transition. Repeatable switching from antiferromagnetic coupling to ferromagnetic coupling is observed in this multilayer system. As a proof-of-concept demonstration of interface-tailored spintronics, this work might provide a general strategy for beyond-CMOS electronics.
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https://hal.univ-lorraine.fr/hal-02861014
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Submitted on : Wednesday, July 8, 2020 - 6:09:08 PM
Last modification on : Thursday, March 11, 2021 - 2:26:02 PM
Long-term archiving on: : Wednesday, September 23, 2020 - 8:26:52 PM

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Xiaofei Fan, Guodong Wei, Xiaoyang Lin, Xinhe Wang, Zhizhong Si, et al.. Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation. Matter, Cell Press, 2020, 2 (6), pp.1582-1593. ⟨10.1016/j.matt.2020.04.001⟩. ⟨hal-02861014⟩

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