Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation - Université de Lorraine Access content directly
Journal Articles Matter Year : 2020

Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation

Xiaofei Fan
  • Function : Author
Guodong Wei
  • Function : Author
Xiaoyang Lin
  • Function : Author
Xinhe Wang
  • Function : Author
Zhizhong Si
  • Function : Author
Xueying Zhang
Qiming Shao
  • Function : Author
Stéphane Mangin
Lei Jiang
  • Function : Author
  • PersonId : 1014401
Weisheng Zhao
  • Function : Author

Abstract

Spintronic interfaces (spinterfaces) with dramatically changeable electronic properties can be a magic building block in spintronics. In this work, we study the interlayer exchange coupling (IEC) effect in a synthetic magnetic multilayer system, where atomically thin phase-change material VO 2 is adopted as a spinterface with reversible metal-to-insulator transition. Repeatable switching from antiferromagnetic coupling to ferromagnetic coupling is observed in this multilayer system. As a proof-of-concept demonstration of interface-tailored spintronics, this work might provide a general strategy for beyond-CMOS electronics.
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Dates and versions

hal-02861014 , version 1 (08-07-2020)

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Xiaofei Fan, Guodong Wei, Xiaoyang Lin, Xinhe Wang, Zhizhong Si, et al.. Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation. Matter, 2020, 2 (6), pp.1582-1593. ⟨10.1016/j.matt.2020.04.001⟩. ⟨hal-02861014⟩
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