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Article Dans Une Revue Applied Physics Letters Année : 1998

Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 barriers formed by rf sputter etching in Ar/O2 plasma

J. Nassar
  • Fonction : Auteur
Michel Hehn
A. Vaurès
  • Fonction : Auteur
F. Petroff
  • Fonction : Auteur
A. Fert
  • Fonction : Auteur

Résumé

Co/Al 2 O 3 /Ni 80 Fe 20 tunnel junctions were grown by sputtering at room temperature on glass and Si substrates, the barrier being formed by rf sputter etching of aluminum in a Ar/O2 plasma. The resistance is controlled for a given junction area by adjusting the oxide barrier thickness. Magnetoresistance ratios of 16% at 4.2 K and 6% at room temperature are obtained with good reproducibility over three orders of magnitude of resistance. Effects related to substrate shunting and oxidation of the bottom Co electrode are discussed.
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Dates et versions

hal-04370625 , version 1 (03-01-2024)

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J. Nassar, Michel Hehn, A. Vaurès, F. Petroff, A. Fert. Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 barriers formed by rf sputter etching in Ar/O2 plasma. Applied Physics Letters, 1998, 73 (5), pp.698-700. ⟨10.1063/1.121952⟩. ⟨hal-04370625⟩
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