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Article Dans Une Revue Applied Physics Letters Année : 2001

Tantalum oxide as an alternative low height tunnel barrier in magnetic junctions

P. Rottländer
  • Fonction : Auteur
Michel Hehn
O. Lenoble
  • Fonction : Auteur
A. Schuhl
  • Fonction : Auteur

Résumé

Magnetic tunnel junctions with a barrier of tantalum oxide were prepared by plasma oxidation of sputter-deposited tantalum. They show magnetoresistance ratios of 2.5% at room temperature and 4% at low temperatures. The material exhibits low barrier heights of ∼0.4 eV. This makes it possible to substantially increase the barrier thickness, compared to a barrier of aluminum oxide. The resulting decrease of coupling between the ferromagnetic layers is easily seen. Tantalum oxide appears to be a candidate for use as a tunnel barrier of spin-dependent tunneling devices.
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Dates et versions

hal-04370635 , version 1 (03-01-2024)

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P. Rottländer, Michel Hehn, O. Lenoble, A. Schuhl. Tantalum oxide as an alternative low height tunnel barrier in magnetic junctions. Applied Physics Letters, 2001, 78 (21), pp.3274-3276. ⟨10.1063/1.1374223⟩. ⟨hal-04370635⟩
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