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Article Dans Une Revue Physical Review Materials Année : 2023

Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi x Se 1 − x

Résumé

Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline BixSe1−x is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in BixSe1−x using the spin-pumping technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of BixSe1−x has the same sign as the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of BixSe1−x and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies
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Dates et versions

hal-04537744 , version 1 (08-04-2024)

Identifiants

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Isabel C. Arango, Alberto Anadón, Silvestre Novoa, van Tuong Pham, Won Young Choi, et al.. Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi x Se 1 − x. Physical Review Materials, 2023, 7, pp.075402. ⟨10.1103/PhysRevMaterials.7.075402⟩. ⟨hal-04537744⟩
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