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Elaboration, caractérisation structurale et luminescence de dépots AIN dopés Er obtenus par PVD magnétron RF

Abstract : The work presented here is a contribution to the study of the photoluminescence (PL) properties of a rare earth ions (Erbium) inserted inside wide gap matrices (AlN) of different morphologies and deposited as thin films. A physical vapour deposition magnetron RF technique has been used to obtain thin layers of aluminium nitride whose crystalline morphologies are ranging from the classical columnar morphology to the nanocrystalline state or amorphous. One shows how, the higher the magnetron power, the larger are the columnar crystallites and how the use of a negative polarization on the silicon substrates allows obtaining nano crystallized layers. Different doping rates (from 0.1 to 6 at. %) have been achieved using a Al+Er composite target.The PL of the Er atom at 1.54 [micro]m has been studied versus the process parameters and so as a function of the different AlN morphologies. It was shown that the maximum of PL emission is achieved for a rate of 1 atomic %. PL intensity was shown to increase with the magnetron power and decrease with the polarization intensity of the substrates. These two results demonstrate that PL intensity is strongly correlated to the matrix morphology. The larger the crystallites, the most efficient are the PL emission allows evidencing the role of the non radiative defects crystalline fields in the crystallites. The role of the defects was confirmed by time resolved photoluminescence measurements and by PL measurements performed on annealed samples or at low temperature. The decrease of PL with temperature is very weak, making this way the material very promising for optoelectronic and photonic applications.
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  • HAL Id : tel-01748649, version 1


Syed Sajjad Hussain. Elaboration, caractérisation structurale et luminescence de dépots AIN dopés Er obtenus par PVD magnétron RF. Autre [cond-mat.other]. Université Henri Poincaré - Nancy 1, 2010. Français. ⟨NNT : 2010NAN10060⟩. ⟨tel-01748649⟩



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