Design, realization and electrical characterization of « Solar-blind » ultraviolet photodetectors based on new alloys BAlGaN

Abstract : Recent developments in III-N material growth technology such as GaN and AlGaN made possible to fabricate high performance solar-blind Schottky, and metal-semiconductor-metal based photodetectors operating in the ultraviolet range -based photodetectors. While GaN and AlGaN have low noise and fast response times, the lack of high internal gain is a limitation for their use in applications that require high sensitivity photodetectors. In this work, we have designed and fabricated BAlGaN-based photodetectors. For this, several BGaN monolayer and superlattices were grown using MOVPE and lithography processes followed by a full characterization of their electrical and electro-optical properties. We show that these new BAlGaN alloys have tremendous impact on the performance of these photodetectors. We were able to achieve photodetectors with large internal gain (up to 3x105) and thus improved sensitivity, low dark current (up to nine orders of magnitude lower compared to our own GaN-based photodetectors), tunable cut-off wavelength in the 260-380 nm range, and more than two orders of magnitude reduction in the response time compared to our own GaN-based photodetectors. Finally, we propose an interpretation, based on the existence of deep level electron and hole traps, to explain the different mechanisms at the origin of the internal gain in these new structure
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Hussein Srour. Design, realization and electrical characterization of « Solar-blind » ultraviolet photodetectors based on new alloys BAlGaN. Other [cond-mat.other]. Université de Lorraine, 2012. English. ⟨NNT : 2012LORR0058⟩. ⟨tel-01749229⟩

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