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Contributions à la synthèse par voie de films de type Bi2Te3

Abstract : The Bismuth Telluride and the ternary derivative compounds develop optimal thermoelectric properties in the range of the ambient temperatures leading to many applications in the field of the transfer of heat or direct thermal generation of electricity. A new way of synthesis of this material was based on the action of various soluble or metal reducing agents on solutions sources of BiIII and TeIV in nitric medium. If the soluble reducers tested do not prove their efficacity, it appeared on the contrary that the film formation of Bi2Te3 can be obtained by displacement by many metals in particular Ni, Bi, Sn, Pb, Fe, Zn. A powerful mode of synthesis was defined by engaging nickel either in massive form or in the form of films. single-phase, homogeneous and coherent coatings were obtained with a thickness of 5 m for an immersion of 2 hours in the solution source. Thin films of 160 nm were also carried out starting from the total conversion of 100 nm nickel deposited in a glass substrate. These thermoelectric pre-films lend themselves then to a complementary development by electrochemistry. In this manner, it was set up the elements of a first experimental device, on 2 junctions p-n, a thermoelectric capacity of 700 V.K-1. This work opens a new way for the simple and not very expensive development of thermoelectric modules.
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Lionel Scidone. Contributions à la synthèse par voie de films de type Bi2Te3. Autre [cond-mat.other]. Université Paul Verlaine - Metz, 2006. Français. ⟨NNT : 2006METZ026S⟩. ⟨tel-01752464⟩



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